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  november 2010 doc id 13688 rev 5 1/15 15 stgb19nc60s STGP19NC60S 20 a, 600 v fast igbt features very low on-voltage drop (v ce(sat) ) minimum power losses at 5 khz in hard switching optimized performance for medium operating frequencies. application medium frequency motor drives description this igbt utilizes the advanced powermesh? process resulting in an excellent trade-off between switching performance and low on-state behavior. figure 1. internal schematic diagram to-220 d 2 pak 1 3 ta b 1 2 3 ta b table 1. device summary order codes marking package packaging stgb19nc60st4 gb19nc60s d 2 pa k tape and reel STGP19NC60S gp19nc60s to-220 tube www.st.com
contents stgb19nc60s, STGP19NC60S 2/15 doc id 13688 rev 5 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
stgb19nc60s, STGP19NC60S electrical ratings doc id 13688 rev 5 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 600 v i c (1) 1. calculated according to the iterative formula continuous collector current at t c = 25c 40 a i c (1) continuous collector current at t c = 100c 20 a i cp (2) 2. pulse width limited by maximum junction temperature and turn-off within rbsoa pulsed collector current 80 a i cl (3) 3. vclamp = 80% of v ces , t j =150 c, r g =10 , v ge =15 v turn-off latching current 80 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25c 130 w t j operating junction temperature - 55 to 150 c table 3. thermal data symbol parameter value unit r thj-c thermal resistance junction-case 0.96 c/w r thj -a thermal resistance junc tion-ambient 62.5 c/w i c t c () t jmax () t c ? r thj c ? v ce sat () max () t jmax () i c t c () , () ---------------------------------------------------------------------------------------------------------- =
electrical characteristics stgb19nc60s, STGP19NC60S 4/15 doc id 13688 rev 5 2 electrical characteristics (t j = 25c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 1ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15v, i c = 12a v ge = 15v, i c =12a,t j =125c 1.55 1.35 1.9 v v v ge(th) gate threshold voltage v ce = v ge , i c = 250 a 4.2 6.2 v i ces collector cut-off current (v ge = 0) v ce = 600 v v ce = 600 v, t j =125c 150 1 a ma i ges gate-emitter leakage current (v ce = 0) v ge = 20v, v ce = 0 100 na g fs forward transconductance v ce = 15v , i c = 12a 10 s table 5. dynamic symbol parameter test cond itions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25v, f = 1mhz, v ge = 0 - 1190 135 28.5 - pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480v, i c = 12a, v ge = 15v, figure 18 - 54.5 8.7 25.8 - nc nc nc
stgb19nc60s, STGP19NC60S electrical characteristics doc id 13688 rev 5 5/15 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt)on turn-on delay time current rise time turn-on current slope v cc = 480v, i c = 12a r g = 10 , v ge = 15v, figure 19 - 17.5 6.2 1870 - ns ns a/s t d(on) t r (di/dt)on turn-on delay time current rise time turn-on current slope v cc = 480v, i c = 12a r g = 10 , v ge = 15v, t j = 125c figure 19 - 17 6.5 1700 - ns ns a/s t r(voff) t d(voff) t f off voltage rise time turn-off delay time current fall time v cc = 480v, i c = 12a r g = 10 , v ge = 15v, figure 19 - 90 175 215 - ns ns ns t r(voff) t d(voff) t f off voltage rise time turn-off delay time current fall time v cc = 480v, i c = 12a r g = 10 , v ge = 15v, t j = 125c figure 19 - 155 245 290 - ns ns ns table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit e on e off (1) e ts 1. turn-off losses include also the tail of the collector current turn-on switching losses turn-off switching losses total switching losses v cc = 480v, i c = 12a r g = 10 , v ge = 15v, figure 17 - 135 815 995 - j j j e on e off (1) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 480v, i c = 12a r g = 10 , v ge = 15v, t j = 125c figure 17 - 200 1175 1375 - j j j
electrical characteristics stgb19nc60s, STGP19NC60S 6/15 doc id 13688 rev 5 2.1 electrical characteri stics (curves) figure 2. output characteristics figure 3. transfer characteristics figure 4. transconductance figure 5. collector-emitter on voltage vs temperature figure 6. gate charge vs gate-source voltage figure 7. capacitance variations
stgb19nc60s, STGP19NC60S electrical characteristics doc id 13688 rev 5 7/15 figure 8. normalized gate threshold voltage vs temperature figure 9. collector-emitter on voltage vs collector current figure 10. normalized breakdown voltage vs temperature figure 11. switching losses vs temperature figure 12. switching losses vs gate resistance figure 13. switching losses vs collector current
electrical characteristics stgb19nc60s, STGP19NC60S 8/15 doc id 13688 rev 5 figure 14. turn-off soa figure 15. thermal impedance figure 16. i c vs. frequency
stgb19nc60s, STGP19NC60S electrical characteristics doc id 13688 rev 5 9/15 2.2 frequency applications for a fast igbt suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is report ed. that frequency is defined as follows: f max = (p d - p c ) / (e on + e off ) the maximum power dissipation is limited by maximum junction to case thermal resistance: equation 1 p d = t / r thj-c considering t = t j - t c = 125 c- 75 c = 50c the conduction losses are: equation 2 p c = i c * v ce(sat) * with 50% of duty cycle, v cesat typical value @125c. power dissipation during on & off commutations is due to the switching frequency: equation 3 p sw = (e on + e off ) * freq. typical values @ 125c for switching losses are used (test conditions: v ce = 480v, v ge =15v, r g = 10 ohm). furthermore, diode recovery energy is included in the e on (see note 1 ), while the tail of the collector current is included in the e off measurements.
test circuits stgb19nc60s, STGP19NC60S 10/15 doc id 13688 rev 5 3 test circuits figure 17. test circuit for inductive load switching figure 18. gate charge test circuit figure 19. switching waveform am01504v1 am01505v1 am01506v1 90 % 10 % 90 % 10 % v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcro ss 90 % 10 %
stgb19nc60s, STGP19NC60S package mechanical data doc id 13688 rev 5 11/15 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data stgb19nc60s, STGP19NC60S 12/15 doc id 13688 rev 5 d2pak (to-26 3 ) mechanical data dim. mm. min. typ. max. a 4.40 4.60 a1 0.0 3 0.2 3 b 0.70 0. 93 b 2 1.14 1.70 c 0.45 0.60 c2 1.2 3 1. 3 6 d 8 . 9 5 9 . 3 5 d1 7.50 e 10 10.40 e1 8 .50 e2.54 e1 4. 88 5.2 8 h15 15. 8 5 j1 2.4 9 2.6 9 l2.2 9 2.7 9 l1 1.27 1.40 l2 1. 3 0 1.75 r0.4 v2 0 8 007 9 457_p
stgb19nc60s, STGP19NC60S package mechanical data doc id 13688 rev 5 13/15 to-220 type a mechanical data dim mm min typ max a 4.40 4.60 b 0.61 0. 88 b 1 1.14 1.70 c0.4 8 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4. 9 5 5.15 f1.2 3 1. 3 2 h1 6.20 6.60 j1 2.40 2.72 l1 3 14 l1 3 .50 3 . 93 l20 16.40 l 3 02 8 . 9 0 ? p 3 .75 3 . 8 5 q 2.65 2. 9 5 0015 988 _rev_s
revision history stgb19nc60s, STGP19NC60S 14/15 doc id 13688 rev 5 5 revision history table 8. document revision history date revision changes 02-jul-2007 1 first release 13-aug-2007 2 from target to preliminary version 18-sep-2007 3 added new section: electrical characteristics (curves) 18-aug-2009 4 inserted d 2 pak package 08-nov-2010 5 modified gate threshold voltage range on ta bl e 4 : s tatic
stgb19nc60s, STGP19NC60S doc id 13688 rev 5 15/15 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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